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“SSM3K357R” is new MOSFET that adopts an active-clamp structure with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays.

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The SSM3K357R protects drivers against damage caused by voltage surges, such as back-EMF caused by inductance. It integrates a pull-down resistor, series resistor and Zener diode, which helps reduce the part count and save>Features· Active clamp structure suitable for driving an inductive load
· Low operating voltage of 3.0 V
· AEC-Q101 qualified

Applications

· Relay and solenoid control for automotive equipment
· Relay and solenoid control for industry equipment
· Clutch control for OA equipment

Product Specifications

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Pin Assignment


 


Application Circuit Example


 The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

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