The second generation 650 V SiC SBD products in DPAK package_产品动态_电源资讯--跃迁电源,跃迁电子,跃迁光电--苏州聚永达电子科技有限公司

All the six products including “TRS2P65F” are the second generation silicon carbide Schottky barrier diodes (SiC SBD). They use the surface mount type DPAK package.

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The new second generation products are less likely to break down with their increased forward surge current (I_FSM) which is about 1.7 times higher than the first generation product, and feature lower loss with their decreased figure of merit (V_F·Q_C^[1]), about 2/3 of the first generation products. They will contribute to making power supplies smaller and more efficient.

Notes: [1] V_F·Q_C (the product of forward voltage and total capacitive charge) is an index representing the loss performance of a SiC SBD. The lower this index value, the lower the loss.

Features

· High forward surge current (About 1.7 times higher than the first generation)
· Low V_F·Q_C^[1] (About 2/3 of the first generation)
· Using surface mount type DPAK package

Applications

· High efficiency power supply for consumer products and OA equipment
(Large screen 4K LCD TV, OLED TV, Projector, Multi-function printer etc.)
· High efficiency power supply for industrial equipment (Base station, PC server etc.)
· Photovoltaic inverters

Product Specifications

Internal Circuit

Application Circuit Example

SiC SBDs are often used in PFC parts in Continuous Current Mode (CCM). When an AC power is applied (for example, when the power is turned on) with Q1 in OFF state, a large current may flow in a diode of the PFC part. I_FSM is surge capability in commercial frequencies, and it is important item not to damage the product.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.